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PAM-XIAMEN
PAM-XIAMEN

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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique
In this letter, a normally-off GaN recessed-gate MOSFET is demonstrated using a nonplasma gate recess technique, in which the access region with AlGaN/GaN heterostructure was selectively grown on a semi-insulating GaN/Si template to naturally form a recesse...
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Nonpolar a-plane ZnO films grown on GaN/sapphire templates with SiNx interlayer by pulsed laser deposition
Nonpolar  a -plane ZnO films were deposited for the first time on nearly lattice-matched  a -plane GaN templates using an  in situ  SiN x  interlayer by the pulsed laser deposition method. The symmetric and asymmetric reciprocal space mappings reveal the br...
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A germanium hybrid pixel detector with 55μm pixel size and 65,000 channels
Hybrid pixel semiconductor detectors provide high performance through a combination of direct detection, a relatively small pixel size, fast readout and sophisticated signal processing circuitry in each pixel. For X-ray detection above 20 keV, high-Z sensor...
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Experimental investigation of slow-positron emission from 4H-SiC and 6H-SiC surfaces
Slow-positron emission from the surfaces of as-grown n-type 4H-SiC and 6H-SiC (silicon carbide) with a conversion efficiency of  ~ 10 −4  has been observed. After 30 min of 1000  o C annealing in forming gas, the conversion efficiency of the n-type 6H-SiC s...
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Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique
Parameters of electrically active defect centres in vanadium-doped 6H silicon carbide (6H-SiC:V) were investigated by means of the photoinduced transient spectroscopy (PITS) and modulated photocurrent (MPC) method. After a short description of the two techn...
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